Circuits, apparatuses, and methods for oscillators

ABSTRACT

Circuits, apparatuses, and methods are disclosed for oscillators. In one such example oscillator circuit, a plurality of delay stages are coupled in series. A variable delay circuit stage is coupled to the plurality of delay stages and is configured to delay a signal through the variable delay circuit stage by a variable delay. The variable delay increases responsive to a rising magnitude of a supply voltage provided to the variable delay circuit stage.

CROSS REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.13/432,916, filed Mar. 28, 2012 and issued as U.S. Pat. No. 8,797,106 onAug. 5, 2014. This application and patent are incorporated herein byreference, in their entirety for any purpose.

TECHNICAL FIELD

Embodiments of the invention relate generally to integrated circuits,and more particularly, in one or more of the illustrated embodiments, tooscillators.

BACKGROUND OF THE INVENTION

Ring oscillators generally include an odd number of series coupledstages, and provide a periodic output signal. Generally, the frequencyof the output signal depends, among other things, on the rate at whicheach of the stages charges and discharges its respective output node(which is the respective input node for the next stage in the series).For example, if each stage includes an inverter formed from an n-channelfield effect transistor (nFET) and a p-channel field effect transistor(pFET), the frequency of the output signal generally depends on the rateat which each nFET discharges that stage's output node and the rate atwhich each pFET charges that output node. The rate at which the nFET andpFET respectively discharge and charge the output node in turn depends,among other things, on the magnitude of the supply voltage provided tothe inverters and the operating temperature of the oscillator.Generally, the lower the operating temperature and the higher themagnitude of the supply voltage, the faster the nFETs and pFETs willrespectively discharge and charge the output node due to the nFETs andpFETs being more conductive and less resistive, when respectivelydischarging and charging the output node. The faster that the nFETs andpFETs respectively discharge and charge the output node, the shorter thedelay through each stage, and consequently, the faster the frequency ofthe periodic, signal generated by the ring oscillator.

Conventionally, the magnitude of the supply voltage for the stages in aring oscillator is regulated in order to reduce variations inoscillation speed for different supply voltage magnitudes. For example,if the external supply voltage provided to the oscillator is known tovary between 1.28V and 1.575V, a supply voltage regulator may provide aregulated voltage of approximately 1.35V to the oscillator regardless ofchanges in the external voltage provided. However, merely regulating thesupply voltage with a supply voltage regulator does not remedyvariations in the charging and discharging times for each stage causedby temperature variations. Also, the regulators that regulate the supplyvoltage can occupy space on and consume power in an integrated circuit.

If the supply voltage regulator is removed, however, the variations inoscillation speed for different supply voltage magnitudes can berelatively large and unpredictable. For example, if a voltage regulatordoes not regulate the supply voltage provided to the stages, an increasein the magnitude of the supply voltage will generally increase thefrequency of the output signal generated by the ring oscillator, asdescribed above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an oscillator according to an embodiment ofthe present invention.

FIG. 2 is a schematic diagram of an oscillator according to anembodiment of the invention.

FIG. 3 is a block diagram of a charge pump according to an embodiment ofthe invention.

FIG. 4 is a block diagram of a memory according to an embodiment of theinvention.

DETAILED DESCRIPTION

Certain details are set forth below to provide a sufficientunderstanding of embodiments of the invention. However, it will be clearto one skilled in the art that embodiments of the invention may bepracticed without these particular details. Moreover, the particularembodiments of the present invention described herein are provided byway of example and should not be used to limit the scope of theinvention to these particular embodiments. In other instances,well-known circuits, control signals, timing protocols, and softwareoperations have not been shown in detail in order to avoid unnecessarilyobscuring the invention.

FIG. 1 illustrates an oscillator circuit 100 with a plurality of delaystages 102, 120, 110, 112, 114 coupled in series, with the output of thelast stage 114 coupled to the input of the stage 102. In operation, theoscillator circuit 100 provides a periodic output signal OUT at theoutput of the last stage 114. Because the number of delay stages 102,120, 110, 112, 114 is odd, the oscillator circuit does not reach asteady state, but instead the output of each of the delay stages 102,120, 110, 112, 114 continuously transitions between logic high and logiclow voltage levels, which in turn causes the output of the last stage114 to provide the OUT signal.

One of the delay stages is a variable delay circuit stage 120 that isconfigured to delay a signal that propagates through the variable delaycircuit stage 120 by a variable delay. The variable delay increasesresponsive to a rising magnitude of a supply voltage provided to thevariable delay circuit stage 120, and may not substantially changeresponsive to a changing operating temperature of the variable delaycircuit stage 120. In other words, the variable delay is proportional tothe magnitude of the supply voltage provided to the variable delaycircuit stage 120 and may not be proportional to the operatingtemperature of the variable delay circuit stage 120. As explained inmore detail below, the variable delay through the variable delay circuitstage 120 changes (e.g., increases) as the charging and/or dischargingtime of a node within the variable delay circuit stage 120 changes(e.g., increases) responsive to a changing (e.g., increasing) magnitudeof the supply voltage provided to the variable delay circuit stage 120.

The other delay stages 102, 110, 112, 114 may also delay a signal thatpropagates through each respective stage. However, the delay introducedby each of the other delay stages 102, 110, 112, 114 may be shorterrelative to the variable delay through the variable delay circuit stage120. Because of this, the frequency of the OUT signal provided by theoscillator circuit 100 may change primarily responsive to the variabledelay through the variable delay circuit stage 120. The frequency of theOUT signal changes responsive to the variable delay through the variabledelay circuit stage 120 in that the frequency of the OUT signal isinversely proportional to the variable delay, which, in turn, isproportional to the delay incurred in charging or discharging the nodewithin the variable delay circuit stage 120.

FIG. 2 illustrates a schematic diagram of one embodiment of anoscillator circuit 200 that may be used for the oscillator circuit 100in FIG. 1. Similar to the oscillator circuit 100 in FIG. 1, theoscillator circuit 200 in FIG. 2 includes a plurality of delay stages202, 220, 210, 212, 214 coupled in series, with the output of the laststage 214 coupled to the input NODE-1 of the stage 202. The output ofthe last stage 214 provides an output signal OUT, which in someembodiments may be provided to a flip-flop circuit 270 to provide aRESTORED signal, as described in more detail below.

The oscillator circuit 200 in FIG. 2 includes a variable delay circuitstage 220 that is configured to delay a signal that propagates throughthe variable delay circuit stage 120 by a variable delay. The variabledelay may be proportional to the magnitude of the supply voltage VCCXprovided to the variable delay circuit stage 220. The other delay stages202, 210, 212, 214 each delay a signal that propagates through theoscillator circuit 200, but the delay introduced by each of the otherdelay stages 202, 210, 212, 214 may be shorter relative to the variabledelay through the variable delay circuit stage 220. The delay may beshorter because, for example, the other delay stages 202, 210, 212, 214have been designed to provide a relatively shorter delay. If the otherdelay stages 202, 210, 212, 214 are formed from nFETs and pFETs, forexample, the delay may be shorter because these delay stages haverelatively large drive strengths (compared to other delay stages in theintegrated circuit incorporating the oscillator circuit 200). Similar tothe oscillator circuit 100 in FIG. 1, the relatively shorter delaysintroduced by the other delay stages 202, 210, 212, 214 may allow thefrequency of the oscillator circuit 200 in FIG. 2 to primarily changeresponsive to the variable delay through the variable delay circuitstage 220.

The delay stage 202 includes a pFET 204 coupled between a supply voltageVCCX node and NODE-2, and an nFET 206 coupled between NODE-2 and areference voltage node, such as ground. The gate of the pFET 204 iscoupled to NODE-1, which is in turn coupled to the output of the lastdelay stage 214. An ENF signal is provided to the gate of the nFET 206,which may be an enable signal that is provided as an active low signal(e.g., a logic low signal indicates that the oscillation circuit 200should be enabled and a logic high signal indicates that the oscillationcircuit 200 should be disabled). In some embodiments, the pFET 204 maybe relatively wide and have relatively large drive strength. As will bedescribed in more detail below, if the pFET 204 is relatively wide andhas a relatively large drive strength, the time that it takes the stage202 to charge NODE-2 may be relatively short in order to allow the delaythrough the stage 220 to change primarily responsive to the time that ittakes the stage 220 to discharge NODE-2.

The variable delay circuit stage 220 (which is the second delay stage inthe embodiment of FIG. 2) includes two nFETs 222, 224 coupled in seriesbetween NODE-2 and a reference voltage node, such as ground. The gate ofone nFET 222 is coupled to NODE-1, and the gate of the other nFET 224 iscoupled to another nFET 201 gate.

The variable delay circuit stage 220 also includes a capacitance 226coupled between NODE-2 and a reference voltage node, such as ground. Insome embodiments, the capacitance 226 may be a parasitic capacitance,whereas in other embodiments the capacitance 226 may be a discretecapacitance formed by, for example, an oxide layer of a FET or acapacitor. The variable delay circuit stage 220 also includes a pFET234, an nFET 236, and a resistance 238 (with resistance value of R0)coupled in series between the supply voltage VCCX node and a referencevoltage node, such as ground. The gate of the nFET 236 is coupled toNODE-2, and the gate of the pFET 234 is coupled to another pFET 228, asdescribed in more detail below. The node between the drain of the pFET234 and the drain of the nFET 236 is NODE-3 as illustrated in FIG. 2,and NODE-3 is coupled to the input of the delay stage 210 (which in turnis coupled to the delay stages 212, 214).

The nFET 201 and the nFET 224 together form a current mirror whereby thecurrent I-1 through the nFETs 222 and 224 “mirrors” the current I-REFthrough the nFET 201. In some embodiments, the nFETs 201, 224 may besimilarly scaled causing the currents I-1 and I-REF to be similar. Inother embodiments, the nFETs 201, 224 may be scaled differently from oneanother, which may cause the currents I-1 and I-REF to be proportionalto one another. The I-REF current is a reference current that ma beproportional to the operating temperature of an integrated circuitincorporating the oscillator circuit 200 but may not depend on themagnitude of the supply voltage VCCX (e.g., the I-REF current may betemperature-dependent but supply-voltage-independent). The magnitude ofthe I-REF current may increase with increasing operating temperatures insome embodiments. In some embodiments, the I-REF current may be providedby, for example, a temperature sensor block (not illustrated in FIG. 2).

As illustrated in FIG. 2, the gates of the nFETs 201, 224 are coupled tothe gate of another nFET 230, which may similarly “mirror” the I-REFcurrent through nFET 201. The source of the nFET 230 is coupled toNODE-4. A resistance 232 (with resistance value of R1) is coupledbetween NODE-4 and a reference voltage node, such as ground. Also, apFET 228 is coupled between NODE-4 and the supply voltage VCCX node. Asmentioned above, the gate of the pFET 228 is coupled to the gate of thepFET 234, with the pFETs 228, 234 also forming a current mirror wherebythe current I-3 through the pFET 234 mirrors the current I-2 throughpFET 228, with the current I-3 being similar or proportional to thecurrent I-2 depending on the scaling of the pFETs 228, 234.

The input of the delay stage 210 is coupled to NODE-3, and the delaystages 212, 214 are each, in turn, coupled to the output of delay stage210. The delay stages 210, 212, 214 may help restore the signal providedby the delay stage 220 to complementary “clean” logic high and logic lowlevels because the signal provided by the delay stage 220 may not fullytransition between a “clean” logic high to a “clean” logic low. Thedelay stage 214 provides the OUT signal. A flip-flop circuit 270 may becoupled to the output of the delay stage 214 and may help restore theduty cycle of the OUT signal so that the duty cycle of the RESTOREDsignal is approximately fifty percent. The flip-flop circuit 270 mayalso be used as a frequency divider in some embodiments, and thefrequency division may be selectable in some embodiments (e.g., througha multiplexer). The RESTORED signal may, for example drive one or morepump core(s) in a charge pump in an integrated circuit, as described inmore detail below.

In operation, the oscillator circuit 200 mirrors thesupply-voltage-independent (but possibly temperature-dependent) I-REFcurrent in discharging NODE-2 (including any charge stored on thecapacitance 226), which, because it is charged through pFET 204 whenconductive (e.g., NODE-1 is charged to a logic high), will have acharged voltage level that is proportional to the magnitude of thesupply voltage VCCX. In other words because the nFETs 222, 224 dischargeNODE-2 at a rate that is independent of the magnitude of the supplyvoltage, the amount of time required to discharge NODE-2 is proportionalto the amount of charge stored on NODE-2 (including the charge stored onthe capacitance 226), which is proportional to the magnitude of thesupply voltage VCCX. Generally, the greater the magnitude of the supplyvoltage VCCX, the more charge will be stored on NODE-2 when it ischarged, and so the longer it will take to discharge NODE-2 given areference current that does not change with changing magnitudes of thesupply voltage VCCX.

Because it will take longer to discharge NODE-2 for greater magnitudesof supply voltage VCCX, the delay through the variable delay circuitstage 220 will be longer for greater magnitude supply voltages VCCX,which in turn will decrease the frequency of the OUT signal and/or theRESTORED signal provided by the oscillator circuit 200. Conversely,because it will take less time to discharge NODE-2 for supply voltagesVCCX with a lower magnitude, the delay through the variable delaycircuit stage 220 will be shorter for supply voltages VCCX with lowermagnitudes, which in turn will increase the frequency of the OUT signaland/or the RESTORED signal provided by the oscillator circuit 200. Asthe variable delay increases or decreases, the frequency of the OUTsignal and/or the RESTORED signal will decrease or increase,respectively, because the frequency is inversely proportional to thevariable delay.

When NODE-1 is discharged (e.g., to logic low), the nFET 222 maytransition from being conductive to being non-conductive, and the pFET204 may transition from being non-conductive to being conductive. Whenthe pFET 204 becomes conductive, it charges NODE-2 including thecapacitance 226 coupled to NODE-2. The pFET 204 may charge NODE-2relatively quickly if the pFET 204 is relatively wide, as describedabove. The voltage level to which the pFET 204 charges NODE-2 isproportional to the magnitude of the supply voltage VCCX. In general,the greater the magnitude of the supply voltage VCCX, the higher thevoltage to which NODE-2 will be charged. When NODE-2 is charged, thenFET 236 is conductive, which discharges NODE-3.

When NODE-1 is charged (e.g., to logic high), the pFET 204 maytransition from being conductive to being non-conductive, and the nFET222 may transition from being non-conductive to being conductive. Whenthe nFET 222 becomes conductive, it discharges NODE-2 including thecapacitance 226 coupled to NODE-2. The rate at which the nFET 222discharges NODE-2 is constant for a given I-REF current. However,because the voltage level to which NODE-2 was charged is proportional tothe magnitude of the supply voltage VCCX, the time or delay required todischarge the voltage level on NODE-2 (including the capacitance 226) isproportional to the magnitude of the supply voltage VCCX. Once NODE-2 isdischarged to less than the threshold voltage, the nFET 236 becomesnon-conductive, and the current I-3 will charge NODE-3.

In addition, if the I-REF current is proportional to the operatingtemperature of the operating circuit, the delay through the variabledelay circuit stage 220 may be relatively stable across differentoperating temperatures because the I-REF current may compensate forlower threshold voltages of the FETs 222, 234, 236 (e.g., when operatingtemperature increases) by increasing the I-1, I-3, and I-4 currents, andmay compensate for higher threshold voltages of the FETs 222, 234, 236(e.g., when operating temperature decreases) by decreasing the I-1, I-3,and I-4 currents.

The time T it takes to discharge NODE-2 may in some embodiments beapproximately calculated by the following equation if the widths of thetransistors 234, 228, 230, 224 are similar and the threshold voltages(Vt) for the FETs 236, 228 are similar:

$\begin{matrix}{T_{{{DISCHARGE}\_{NODE}}\text{-}2} = {C*\left\lbrack {\frac{\left( {{VCCX} - {Vt}} \right)*\left( {1 - \frac{R\; 0}{R\; 1}} \right)}{IREF} - {R\; 0}} \right\rbrack}} & \left( {{Equation}\mspace{14mu} 1} \right)\end{matrix}$

With reference to Equation 1, if temperature remains constant (I-REF,R0, R1, and Vt thereby remains constant), the time it takes to dischargeNODE-2 generally increases with increasing magnitudes of the supplyvoltage VCCX. On the other hand, if the supply voltage VCCX remainsrelatively constant but temperature increases, I-REF, R0, R1 willincrease while Vt increases. If the resistance values R0, R1 have beenproperly chosen and the FETs 236, 228 have been properly designed, anearly constant discharge delay may be achieved because theincreases/decreases in I-REF, R0, R1, may effectively cancel out thedecrease/increase in Vt.

FIG. 3 illustrates a charge pump 300 that includes an oscillator circuit301 that may be similar to the oscillator circuits 100, 200 describedabove. The oscillator circuit 301 provides a periodic signal OUT to apump core circuit 302, which in turn provides a pumped voltage VCCP to aVCCP bus 307. The pumped voltage VCCP is also provided to a regulatorcircuit 303. The regulator circuit 303 may detect the voltage level ofthe pumped voltage VCCP on the VCCP bus 307 and selectively enable anddisable the oscillator circuit 301 in response to the detected voltagelevel. For example, if the regulator circuit 303 detects that thevoltage level of the voltage on the VCCP bus 307 is not adequate, theregulator circuit 303 may provide a logic low ENF signal to theoscillator circuit 301 in order to enable the oscillator circuit 301 andcause the oscillator circuit 301 to pump the pump core circuit 302. Whenthe regulator circuit 303 detects that the voltage level on the VCCP bus307 is adequate, the regulator circuit 303 may provide a logic high ENFsignal to the oscillator circuit 301 in order to disable the oscillatorcircuit 301 and cause the oscillator circuit 301 to stop pumping thepump core circuit 302. In general, there may be a response delay betweenthe time when the voltage level on the VCCP bus 307 is adequate and whenthe oscillator circuit 301 turns off responsive to the ENF signal beingprovided as logic high.

The amount of current that the charge pump 300 can provide to the VCCPbus 307 depends, among other things, on the magnitude of the supplyvoltage provided to the pump core circuit 302 and the frequency of theOUT signal (which in turn depends, among other things, on the magnitudeof the supply voltage provided to the oscillator circuit 301). Ingeneral, the higher the magnitude of the supply voltage provided to thepump core and the faster the frequency of the OUT signal, the greaterthe amount of current (which may also be referred to as “capacity”) thatthe charge pump 300 can provide to the VCCP bus 307.

As described above, in conventional charge pumps, the magnitude of thesupply voltage provided to both the pump core circuit and the oscillatorcircuit is regulated. However, if the magnitude of the supply voltageprovided to both the pump core circuit and the oscillator circuit is notregulated, then increasing magnitudes of supply voltage provided toeither or both of the oscillator circuit and the pump core circuit mayincrease the amount of current that the charge pump can provide to theVCCP bus. While it may be desirable in some instances to have anincreased amount of current available, in other instances, it may not bedesirable to have an increased amount of current available due to, forexample, a constant current demand across different magnitudes of thesupply voltage. For example, as described above, there may be a responsedelay between the time when the voltage level of the pumped voltage VCCPis adequate and when the oscillator circuit turns off in response to theENF signal provided by the regulator circuit. If there is a relativelylarge amount of current available from the pump core circuit (due to anincreased magnitude of supply voltage provided to the oscillator circuitand/or to the pump core circuit), the current provided by the pump corecircuit will continue to charge the VCCP bus during the response delaydescribed above, which may overcharge the VCCP bus, creating noise onthe VCCP bus. Additionally, the faster the frequency of the oscillatorcircuit 301, the lower the efficiency of the charge pump may be. So, forunregulated conventional charge pumps, the increased magnitude of thesupply voltage provided to both the oscillator circuit and the pump corecircuit may increase the noise on the VCCP bus while at the same timedecrease the efficiency of the charge pump, both of which may wastepower. Additionally, the increased current may require relatively wideinterconnect wires to be used within the charge pump (particularly inthe pump core circuit) in order to prevent electrical migrationdegradation.

Accordingly, the oscillator circuit 301 illustrated in FIG. 3 includes avariable delay circuit 320 such as one of the variable delay circuits120, 220 described above. The variable delay circuit 320 allows theoscillator circuit 301 to provide the OUT signal at a frequency thatdecreases for increasing magnitudes of supply voltage VCCX. Thedecreased frequency of the OUT signal provided to the pump core circuit302 may reduce the capacity of the charge pump 300. The decreasedcapacity of the charge pump 300 due to the decreased frequency of theOUT signal may, however, be counteracted by the increased capacity dueto the increased magnitude of supply voltage provided to the pump corecircuit 302. The charge pump 300 may be useful in applications where thedemand for current from the charge pump 300 is relatively constant, afew examples of which are given below.

Furthermore, because the variable delay circuit 320 reduces the capacityof the charge pump 300, noise may be reduced on the VCCP bus 307 and theefficiency of the charge pump 300 may increase. Also, because thevariable delay circuit 320 prevents the capacity from greatly increasingwhen the magnitude of the supply voltage VCCX increases, the thicknessof interconnect wires within the pump core circuit 302 and the chargepump 300 in general may be reduced. The reduced thickness ofinterconnect wires in turn may allow for a charge pump 300 that occupiesa smaller area on an integrated circuit, and may simplify routing of theinterconnect wires within the pump core circuit.

FIG. 4 illustrates a portion of a memory 400 according to an embodimentof the present invention. The memory 400 includes an array 402 of memorycells, which may be, for example, DRAM memory cells, SRAM memory cells,flash memory cells, or some other types of memory cells. The memory 400includes an address/command decoder 406 that receives memory commandsand addresses through an ADDR/CMD bus. The address/command decoder 406provides control signals, based on the commands received through theADDR/CMD bus. The address/command decoder 406 also provides row andcolumn addresses to the memory 400 through an address bus and an addresslatch 410. The address latch then outputs separate column addresses andseparate row addresses.

The row and column addresses are provided by the address latch 410 to arow address decoder 422 and a column address decoder 428, respectively.The column address decoder 428 selects bit lines extending through thearray 402 corresponding to respective column addresses. The row addressdecoder 422 is connected to word line driver 424 that activatesrespective rows of memory cells in the array 402 corresponding toreceived row addresses. The selected data line (e.g., a bit line or bitlines) corresponding to a received column address are coupled to aread/write circuitry 430 to provide read data to a data output circuit434 via an input-output data bus 440. An output pad 442 coupled to thedata output circuit 434 is used for electrically coupling to the memory400. Write data are provided to the memory array 402 through a datainput circuit 444 and the memory array read/write circuitry 430. Aninput pad 446 coupled to the data input circuit 442 is used forelectrically coupling to the memory 400. The address/command decoder 406responds to memory commands and addresses provided to the ADDR/CMD busto perform various operations on the memory array 402. In particular,the address/command decoder 406 is used to provide control signals toread data from and write data to the memory array 402.

The word line driver 424 may include one or more charge pumps 450, whichma include an oscillator circuit such as those 100, 200, 301 describedabove. The charge pump 450 may provide a pumped voltage VCCP to one ormore word lines during programming of the word lines, and the chargepump(s) may be similar to the charge pump 300 illustrated in FIG. 3 anddescribed above.

Alternatively, or in addition to the charge pump 450 including anoscillator circuit as described herein, the memory 400 may include anoscillator circuit in a self-refresh circuit (not specificallyillustrated in FIG. 4). The self-refresh circuit may refresh the datastored in the cells of the memory array 402. The rate at which the datain the memory array 402 needs to be refreshed may be inverselyproportional to the magnitude of the supply voltage provided to thememory array. If the magnitude of the supply voltage provided to thememory array is relatively low, then the cells of the memory array 402may need to be refreshed more often, whereas if the magnitude of thesupply voltage provided to the memory array is relatively high, then thecells of the memory array 402 may need to be refreshed less often. Assuch, an oscillator with an output signal that whose frequency isinversely proportional to the magnitude of the supply voltage providedto the memory array 402 may be used to control the refresh rate of thememory array 402 in order to reduce power that may be wasted if thememory array 402 is needlessly refreshed too often when the magnitude ofthe supply voltage is relatively high, while still refreshing the memoryarray 402 frequently enough when the magnitude of the supply voltage isrelatively low. In these cases, the supply voltage for the memory array402 may be used as the supply voltage for the oscillator.

From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. For example, FIGS. 1, 2, and 3illustrate embodiments of an oscillator circuit 100, 200, 301, FIGS. 1,2, and 3 illustrate embodiments of a variable delay circuit 120, 220,320, and FIGS. 3 and 4 illustrated embodiments of a charge pump 300,450. However, other oscillator circuits, variable delay circuits and/orother charge pumps may be used which are not limited to having the samedesign, and may be of different designs and include circuitry differentfrom the circuitry in the embodiments illustrated in these Figures.

For example, the oscillator circuits 100, 200 illustrated in FIGS. 1 and2 may be used in applications other than a charge pump. As anotherexample, although FIG. 2 illustrates an oscillator circuit 200 whereinthe variable delay through the variable delay circuit 220 isproportional to the amount of time required to discharge NODE-2, anotherembodiment of an oscillator circuit 200 may include a variable delaycircuit wherein the variable delay is proportional to the time requiredto charge a node. Also, although the oscillator circuit 200 includes avariable delay circuit stage 220 as the second delay stage, a variabledelay circuit stage may be included as the third stage, or as adifferent stage. In still other embodiments, a plurality of variabledelay circuit stages may be included in an oscillator circuit.

Furthermore, the oscillator circuits illustrated and described hereinmay be used in a broad range of different apparatuses, such ascircuitry, a memory device, a memory system (e.g., SSD), an electronicdevice or system (e.g., a computer, smart phone, server, etc.), and soforth.

Accordingly, the invention is not limited except as by the appendedclaims.

What is claimed is:
 1. An apparatus, comprising: a charge pump circuitconfigured to provide an output voltage, wherein a level of the outputvoltage is based at least in part on an input signal; and an oscillatorcircuit including a variable delay and a plurality of non-adjustabledelays, the oscillator circuit configured to adjust the input signal andto provide the input signal, wherein the input signal is adjusted basedat least in part on a delay of the variable delay, the delay of thevariable delay proportional to an amount of time required to discharge anode in the variable delay, and wherein the node is discharged by acurrent source that is substantially independent of the magnitude of asupply voltage provided to the variable delay.
 2. The apparatus of claim1, wherein the oscillator circuit is configured to adjust the variabledelay responsive to a rising magnitude of the supply voltage provided tothe variable delay.
 3. The apparatus of claim 1, further comprising aregulator configured to determine the level of the output voltage of thecharge pump and to enable the oscillator circuit based on the level ofthe output voltage being inadequate.
 4. The apparatus of claim 1,wherein the delay of the variable delay does not substantially changeresponsive to a changing operating temperature of the oscillatorcircuit.
 5. The apparatus of claim 1, wherein a frequency of the inputsignal is based at least in part on the delay of the variable delay. 6.The apparatus of claim 5, wherein the frequency of the input signaldecreases responsive to increases in the magnitude of the supply voltageprovided to the variable delay.
 7. The apparatus of claim 1, wherein acapacity of the charge pump is affected by an operating frequency of theinput signal.
 8. A memory, comprising: an array of memory cells; anaddress/command decoder configured to decode address and commandsignals; a word line driver coupled to the address/command decoder andto the array of memory cells, the word line driver comprising a chargepump configured to provide a pump voltage to one or more word lines ofthe array of memory cells responsive to an input signal, based at leastin part on a command, the charge pump comprising: an oscillator circuitcomprising a plurality of non-adjustable delays and a variable delay andconfigured to adjust the input signal and to provide an adjusted inputsignal, wherein the input signal is adjusted based at least in part on adelay of the variable delay, the delay of the variable delayproportional to an amount of time required to discharge a node in thevariable delay, and wherein the node is discharged by a current sourcethat is substantially independent of the magnitude of a supply voltageprovided to the variable delay; and a regulator configured to determinea level of the pump voltage of the charge pump and to enable theoscillator circuit based on the level of the pump voltage.
 9. The memoryof claim 8, wherein the oscillator circuit is enabled when the level ofthe pump voltage is not adequate.
 10. The memory of claim 8, wherein theoscillator circuit is disabled when the level of the pump voltage isadequate.
 11. The memory of claim 8, wherein the pump voltage providedby the charge pump is provided responsive to a program command.
 12. Thememory of claim 8, wherein the level of the pump voltage changes basedon a frequency of operation of the oscillator circuit.
 13. The memory ofclaim 12, wherein the frequency of operation of the oscillator circuitis based at least in part on the magnitude of the supply voltage.
 14. Anapparatus, comprising: a ring oscillator configured to delay a periodicinput signal and to provide the periodic input signal based at least inpart on an enable signal, the ring oscillator comprising a plurality ofnon-adjustable delays coupled in series with a variable delay, whereinan input of a first non-adjustable delay and an input of the variabledelay are coupled with an output of the ring oscillator, wherein thevariable delay is configured to adjust the periodic input signal basedon a delay of the variable delay, wherein the delay of the variabledelay is based on a discharge time of a node of the variable delay, andwherein the discharge time of the node is based on a current source thatis substantially independent of the magnitude of a supply voltageprovided to the variable delay; a charge pump configured to receive theperiodic input signal and provide an output voltage based at least inpart on the periodic input signal; and control logic configured toselectively provide the enable signal based at least in part on thelevel of the output voltage.
 15. The apparatus of claim 14, wherein aperiod of the periodic input signal is adjusted based at least in parton the magnitude of the supply voltage.
 16. The apparatus of claim 14,wherein the level of the output voltage is based at least in part on themagnitude of the supply voltage.
 17. The apparatus of claim 14, whereinthe level of the output voltage is based at least in part on thedischarge time of the node.
 18. The apparatus of claim 14, wherein acapacity of the charge pump is maintained when the period of theperiodic input signal increases based on an increase in the voltagelevel of the periodic input signal.
 19. The apparatus of claim 14,wherein a level of current provided by the current source isproportional to an operating temperature of the apparatus.
 20. Theapparatus of claim 14, wherein the discharge time of the node isproportional to the magnitude of a supply voltage provided to thevariable delay.